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dc.contributor.authorKim, JS-
dc.contributor.authorIl Park, W-
dc.contributor.authorLee, CH-
dc.contributor.authorYi, GC-
dc.date.accessioned2016-04-01T01:49:12Z-
dc.date.available2016-04-01T01:49:12Z-
dc.date.created2009-02-28-
dc.date.issued2006-10-
dc.identifier.issn0374-4884-
dc.identifier.other2006-OAK-0000006298-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/23774-
dc.description.abstractWe report on the fabrication of electrical biosensors based on functionalized ZnO nanorod surfaces with biotin for highly sensitive detection of biological molecules. Due to the clean interface and easy surface modification, the ZnO nanorod sensors can easily detect streptavidin binding down to a concentration of 25 nM, which is more sensitive than previously reported one-dimensional (1D) nanostructure electrical biosensors. In addition, the unique device structure with a micrometer-scale hole at the center of the ZnO nanorod's conducting channel reduces the leakage current from the aqueous solution, hence enhancing device sensitivity. Moreover, ZnO nanorod field-effect-transistor (FET) sensors may open up opportunities to create many other oxide nanorod electrical sensors for highly sensitive and selective real-time detection of a wide variety of biomolecules.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.subjectZnO-
dc.subjectnanorod-
dc.subjectbiosensor-
dc.subjectfield effect transistor (FET)-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectNANOWIRE NANOSENSORS-
dc.subjectADSORBED PROTEINS-
dc.subjectSILICON NANOWIRES-
dc.subjectCHEMICAL SENSORS-
dc.subjectFET DEVICES-
dc.subjectHYSTERESIS-
dc.subjectDNA-
dc.titleZnO nanorod biosensor for highly sensitive detection of specific protein binding-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.author.googleKim, JS-
dc.author.googleIl Park, W-
dc.author.googleLee, CH-
dc.author.googleYi, GC-
dc.relation.volume49-
dc.relation.issue4-
dc.relation.startpage1635-
dc.relation.lastpage1639-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.4, pp.1635 - 1639-
dc.identifier.wosid000241290000055-
dc.date.tcdate2019-01-01-
dc.citation.endPage1639-
dc.citation.number4-
dc.citation.startPage1635-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume49-
dc.contributor.affiliatedAuthorYi, GC-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc43-
dc.type.docTypeArticle-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthornanorod-
dc.subject.keywordAuthorbiosensor-
dc.subject.keywordAuthorfield effect transistor (FET)-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-

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이규철YI, GYU CHUL
Dept of Materials Science & Enginrg
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