DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Yong, K | - |
dc.date.accessioned | 2016-04-01T01:50:10Z | - |
dc.date.available | 2016-04-01T01:50:10Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2006-09 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2006-OAK-0000006242 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/23810 | - |
dc.description.abstract | A thin film structure of a HfSixOy/Al2O3/Si gate stack was fabricated on Si(100) by self-limiting atomic layer chemical vapor deposition (ALCVD). An atomically flat interface of Al2O3/silicon was observed and the impurity concentrations in the bulk film were below the XPS detection limit. Hf-silicate (HfSixOy) film was deposited using tetrakis-diethylamido-hafnium [Hf(N(C2H5)(2))(4)] and tetra-n-butyl-orthosilicate [Si(OC4H9)(4)], The grown Hf-silicate film showed a Si-rich composition (similar to 30% HfO2), whereas an Al2O3 layer showed a stoichiometric composition ratio of O/Al. The electrical properties of the gate stack were characterized using capacitance-voltage (C-V) and current-voltage (I-V) measurements of the metal-oxide-metal (MIM) structure. The dielectric constant (k similar to 10.5) of the HfSixOy/Al2O3 film was higher than that (k similar to 8.1) of an Al2O3 single layer of a similar thickness. Rapid thermal annealing (RTA)-treated HfSixOy/Al2O3 films showed a positive shift in flat band voltage (V-fb), whereas as-deposited samples did not show positive shifts in V-FB. The leakage current densities (J(g)) of the as-grown and the annealed HfSixOy/Al2O3 films were both below 1 X 10(-7) A/cm(2) at a bias of -1.0 V. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.subject | gate stack | - |
dc.subject | hafnium silicate | - |
dc.subject | alumina | - |
dc.subject | atomic layer chemical vapor deposition | - |
dc.subject | thin film | - |
dc.subject | dielectric materials | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | ULTRATHIN AL2O3 FILMS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | SILICATE FILMS | - |
dc.subject | HAFNIUM | - |
dc.subject | DIELECTRICS | - |
dc.subject | INTERFACE | - |
dc.subject | STABILITY | - |
dc.title | Growth and characterization of Hf-silicate/Al2O3 gate stacks grown on Si(100) by self-limiting atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1143/JJAP.45.7080 | - |
dc.author.google | Kim, J | - |
dc.author.google | Lee, S | - |
dc.author.google | Yong, K | - |
dc.relation.volume | 45 | - |
dc.relation.issue | 9A | - |
dc.relation.startpage | 7080 | - |
dc.relation.lastpage | 7083 | - |
dc.contributor.id | 10131864 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.9A, pp.7080 - 7083 | - |
dc.identifier.wosid | 000240806800063 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 7083 | - |
dc.citation.number | 9A | - |
dc.citation.startPage | 7080 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.volume | 45 | - |
dc.contributor.affiliatedAuthor | Yong, K | - |
dc.identifier.scopusid | 2-s2.0-33749030159 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.description.scptc | 4 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ULTRATHIN AL2O3 FILMS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SILICATE FILMS | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | gate stack | - |
dc.subject.keywordAuthor | hafnium silicate | - |
dc.subject.keywordAuthor | alumina | - |
dc.subject.keywordAuthor | atomic layer chemical vapor deposition | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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