Photoluminescent characteristics of Ni-catalyzed GaN nanowires
SCIE
SCOPUS
- Title
- Photoluminescent characteristics of Ni-catalyzed GaN nanowires
- Authors
- Yoo, J; Hong, YJ; An, SJ; Yi, GC; Chon, B; Joo, T; Kim, JW; Lee, JS
- Date Issued
- 2006-07-24
- Publisher
- AMER INST PHYSICS
- Abstract
- The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grown by the Ni-catalyst-assisted vapor-liquid-solid method. From PL spectra of Ni-catalyzed GaN nanowires at 10 K, several PL peaks were observed at 3.472, 3.437, and 3.266 eV, respectively. PL peaks at 3.472 and 3.266 eV are attributed to neutral-donor-bound excitons and donor-acceptor pair, respectively. Furthermore, according to the results from temperature-dependent and time-resolved PL measurements, the origin of the PL peak at 3.437 eV is also discussed. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23898
- DOI
- 10.1063/1.2243710
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 89, no. 4, 2006-07-24
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