Structural characterization of beta-SiC nanowires synthesized by direct heating method

Abstract

Crystal structure of beta-SiC nanowires was investigated using Raman spectroscopy, FT-IR, XRD, transmission electron microscopy and selected area electron diffraction. Cubic beta-SiC nanowires were synthesized by heating NiO catalyzed Si substrates with WO3 and graphite mixed powders in the growth temperature of 1000 - 1100 degrees C. HRTEM image showed atomic arrangements of the grown SiC nanowires with a main growth direction of [111]. Raman spectra showed two characteristic peaks at 796 cm(-1) and 968 cm(-1), which are corresponding to transversal optic mode and longitudinal optic mode of beta-SiC, respectively. Also, FT-IR absorption spectroscopy showed a SiC characteristic absorption band at similar to 792 cm(-1). (c) 2005 Elsevier B.V All rights reserved.