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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Grekhov, IV | - |
| dc.contributor.author | Kostina, LS | - |
| dc.contributor.author | Argunova, TS | - |
| dc.contributor.author | Belyakova, EI | - |
| dc.contributor.author | Je, JH | - |
| dc.contributor.author | Ivanov, PA | - |
| dc.contributor.author | Samsonova, TP | - |
| dc.date.accessioned | 2016-04-01T01:55:19Z | - |
| dc.date.available | 2016-04-01T01:55:19Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2006-05 | - |
| dc.identifier.issn | 1063-7850 | - |
| dc.identifier.other | 2006-OAK-0000005962 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24005 | - |
| dc.description.abstract | The direct bonding of two oxide-free 6H-SiC(0001) silicon carbide single crystal wafers, one smooth and another bearing an artificial microscopic relief, has been studied. According to the X-ray topography data, the bonded surface fraction reaches 85% of the total area. The pattern of stress distribution at the interface is aperiodic, which is indicative of an inhomogeneous microroughness of the surface of bonded wafers. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | MAIK NAUKA/INTERPERIODICA/SPRINGER | - |
| dc.relation.isPartOf | TECHNICAL PHYSICS LETTERS | - |
| dc.title | Direct bonding of silicon carbide wafers with a regular relief at the interface | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1134/S1063785006050245 | - |
| dc.author.google | Argunova, TS | - |
| dc.author.google | Belyakova, EI | - |
| dc.author.google | Grekhov, IV | - |
| dc.author.google | Ivanov, PA | - |
| dc.author.google | Je, JH | - |
| dc.author.google | Kostina, LS | - |
| dc.author.google | Samsonova, TP | - |
| dc.relation.volume | 32 | - |
| dc.relation.startpage | 453 | - |
| dc.relation.lastpage | 455 | - |
| dc.contributor.id | 10123980 | - |
| dc.relation.journal | TECHNICAL PHYSICS LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | TECHNICAL PHYSICS LETTERS, v.32, no.5, pp.453 - 455 | - |
| dc.identifier.wosid | 000237974500024 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 455 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 453 | - |
| dc.citation.title | TECHNICAL PHYSICS LETTERS | - |
| dc.citation.volume | 32 | - |
| dc.contributor.affiliatedAuthor | Je, JH | - |
| dc.identifier.scopusid | 2-s2.0-33744774991 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 7 | - |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 제정호JE, JUNG HO
- Dept of Materials Science & Enginrg