Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor
SCIE
SCOPUS
- Title
- Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor
- Authors
- Baek, CH; Oh, TK; Kang, BK
- Date Issued
- 2005-08
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- This paper presents the effect of surface treatment on the electrical properties of an AlGaAs/GaAs heterojunction bipolar transistor (HBT). The extrinsic base surface of the HBT was treated in sequence with a (NH4)(2)S-x:H2O = 1:1 solution, H-2 plasma, and NH3 plasma. The treated HBT had a lower surface recombination current, base resistance, and low-frequency base current noise than the untreated HBT. These values decreased by 32%, 42%, and similar to 3 dB, respectively. Because of the reduced base resistance, the maximum frequency of oscillation f(max), which was 40.3 GHz without surface treatment, improved to 57.8 GHz. (c) 2005 Elsevier Ltd. All rights reserved.
- Keywords
- surface treatment; heterojunction bipolar transistor; ideality factor; 1/f noise; maximum oscillation frequency; EQUIVALENT-CIRCUIT; CURRENT GAIN; PASSIVATION LAYER; EXTRACTION; GAAS; HBTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24369
- DOI
- 10.1016/J.SSE.2005.0
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 49, no. 8, page. 1335 - 1340, 2005-08
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