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Cited 16 time in webofscience Cited 16 time in scopus
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dc.contributor.authorPark, JY-
dc.contributor.authorLee, JM-
dc.contributor.authorJe, JH-
dc.contributor.authorKim, SS-
dc.date.accessioned2016-04-01T02:07:04Z-
dc.date.available2016-04-01T02:07:04Z-
dc.date.created2009-02-28-
dc.date.issued2005-08-01-
dc.identifier.issn0022-0248-
dc.identifier.other2005-OAK-0000005316-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/24455-
dc.description.abstractEarly stage growth behavior of vertically aligned ZnO nanoneedles by metalorganic chemical vapor deposition was investigated mainly using X-ray diffraction. In very early stages of growth, 3-dimensional island-like ZnO grains initially nucleate and grow on the substrate surface, then cover its whole surface, consequently resulting in formation of a continuous layer. The layer grows epitaxially with a 30 degrees rotation of ZnO basal planes with respect to the Al2O3 (0 0 0 1) substrate, while being coherently strained to the substrate. On top of the existing well-aligned continuous ZnO layer, vertically as well as laterally aligned nanoneedles start to grow as the growth proceeds further. The onset of the nucleation and growth of nanoneedles is likely to be associated with the relaxation of a compressive strain developed in the continuous ZnO layer formed before the growth of nanoneedles. (c) 2005 Elsevier B.V. All rights reserved.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.relation.isPartOfJOURNAL OF CRYSTAL GROWTH-
dc.subjecthigh-resolution X-ray diffraction-
dc.subjectmetalorganic chemical vapor deposition-
dc.subjectzinc oxide-
dc.subjectsemiconducting II-VI materials-
dc.subjectlight emitting diodes-
dc.subjectTHIN-FILMS-
dc.subjectNANOWIRES-
dc.subjectSAPPHIRE-
dc.subjectNANORODS-
dc.subjectEPITAXY-
dc.titleEarly stage growth behavior of ZnO nanoneedle arrays on Al2O3(0001) by metalorganic chemical vapor deposition-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1016/j.jcrysgro.2005.04.035-
dc.author.googlePark, JY-
dc.author.googleLee, JM-
dc.author.googleJe, JH-
dc.author.googleKim, SS-
dc.relation.volume281-
dc.relation.issue2-4-
dc.relation.startpage446-
dc.relation.lastpage451-
dc.contributor.id10123980-
dc.relation.journalJOURNAL OF CRYSTAL GROWTH-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.281, no.2-4, pp.446 - 451-
dc.identifier.wosid000231011600034-
dc.date.tcdate2019-02-01-
dc.citation.endPage451-
dc.citation.number2-4-
dc.citation.startPage446-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume281-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-22144440186-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc14-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusNANORODS-
dc.subject.keywordPlusEPITAXY-
dc.subject.keywordAuthorhigh-resolution X-ray diffraction-
dc.subject.keywordAuthormetalorganic chemical vapor deposition-
dc.subject.keywordAuthorzinc oxide-
dc.subject.keywordAuthorsemiconducting II-VI materials-
dc.subject.keywordAuthorlight emitting diodes-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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