Doping of Si into GaN nanowires and optical properties of resulting composites
SCIE
SCOPUS
- Title
- Doping of Si into GaN nanowires and optical properties of resulting composites
- Authors
- Xu, C; Chung, S; Kim, M; Kim, DE; Chon, B; Hong, S; Joo, T
- Date Issued
- 2005-04
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- Doping of Si into GaN nanowires has been successfully attained via thermal evaporation in the presence of a suitable gas atmosphere. Analysis indicated that the Si-cloped GaN nanowire is a single crystal with a hexagonal wurtzite structure, containing 2.2 atom % of Si. The broadening and the shift of Raman peak to lower frequency are observed, which may be attributed to surface disorder and various strengths of the stress. The band-gap emission (358 nm) of Si-cloped GaN nanowires relative to that (370 nm) of GaN nanowires has an apparent blue shift (-12 nm), which can be ascribed to doping impurity Si.
- Keywords
- GaN nanowires; Raman scattering; photoluminescence; nanocomposites; GALLIUM NITRIDE NANOWIRES; ASSISTED CATALYTIC GROWTH; LIGHT-EMITTING-DIODES; RAMAN-SCATTERING; NANORODS; BLUE; SPECTRA; DISPERSION; SILICON; ALN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24596
- DOI
- 10.1166/JNN.2005.097
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 5, no. 4, page. 530 - 535, 2005-04
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- There are no files associated with this item.
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