Formation and electronic properties of double-walled boron nitride nanotubes
SCIE
SCOPUS
- Title
- Formation and electronic properties of double-walled boron nitride nanotubes
- Authors
- Jhi, SH; Roundy, DJ; Louie, SG; Cohen, ML
- Date Issued
- 2005-05
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- The electronic and structural properties of double-walled boron nitride (BN) nanotubes are studied using the first principle pseudopotential density functional method. It is shown that zigzag-type tubes have a larger formation energy for the double-walled configuration than the armchair-type structure, and that interwall stacking plays a significant role for intertube interactions and in the formation of multiwall BN nanotubes. The fundamental energy gap of double-walled BN nanotubes was found to be smaller than that of single-walled tubes mostly due to band shift. It is shown that the electronic properties of double-walled BN tubes exhibit a slight but noticeable difference for the zigzag and armchair type tubes studied. (c) 2005 Elsevier Ltd. All rights reserved.
- Keywords
- boron nitride; nanotubes; interwall; electronic structure; BN NANOTUBES; CARBON NANOTUBES; ROPES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24615
- DOI
- 10.1016/j.ssc.2005.02.007
- ISSN
- 0038-1098
- Article Type
- Article
- Citation
- SOLID STATE COMMUNICATIONS, vol. 134, no. 6, page. 397 - 402, 2005-05
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