DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, ZH | - |
dc.contributor.author | Nie, Y | - |
dc.contributor.author | Ding, SY | - |
dc.contributor.author | Lee, HJ | - |
dc.contributor.author | Son, YU | - |
dc.contributor.author | Bae, MH | - |
dc.contributor.author | Nakajima, K | - |
dc.date.accessioned | 2016-04-01T02:11:46Z | - |
dc.date.available | 2016-04-01T02:11:46Z | - |
dc.date.created | 2009-08-20 | - |
dc.date.issued | 2005-01-30 | - |
dc.identifier.issn | 0217-9792 | - |
dc.identifier.other | 2005-OAK-0000005062 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24631 | - |
dc.description.abstract | The multiple quasiparticle tunnelling branches with large hysteresis were measured on the mesas of Si+ implanted Bi2Sr2CaCu2O8+x single crystals. For given Si+ dosage the tunnelling critical current I-C decreased for junctions located closer to the mesa surface; meanwhile the voltage interval between the neighboring quasiparticle branches decreased with increasing the Si+ dosage. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | WORLD SCIENTIFIC PUBL CO PTE LTD | - |
dc.relation.isPartOf | INTERNATIONAL JOURNAL OF MODERN PHYSICS B | - |
dc.title | Modulation of superconductivity by Si+ implantation in Bi2212 single crystals | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1142/S0217979205028670 | - |
dc.author.google | Wang, ZH | - |
dc.author.google | Nie, Y | - |
dc.author.google | Ding, SY | - |
dc.author.google | Lee, HJ | - |
dc.author.google | Son, YU | - |
dc.author.google | Bae, MH | - |
dc.author.google | Nakajima, K | - |
dc.relation.volume | 19 | - |
dc.relation.issue | 1-3 | - |
dc.relation.startpage | 407 | - |
dc.relation.lastpage | 409 | - |
dc.contributor.id | 10080084 | - |
dc.relation.journal | INTERNATIONAL JOURNAL OF MODERN PHYSICS B | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | INTERNATIONAL JOURNAL OF MODERN PHYSICS B, v.19, no.1-3, pp.407 - 409 | - |
dc.identifier.wosid | 000228635500009 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 409 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 407 | - |
dc.citation.title | INTERNATIONAL JOURNAL OF MODERN PHYSICS B | - |
dc.citation.volume | 19 | - |
dc.contributor.affiliatedAuthor | Lee, HJ | - |
dc.identifier.scopusid | 2-s2.0-18444371451 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalWebOfScienceCategory | Physics, Mathematical | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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