DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, K | - |
dc.contributor.author | Choi, KS | - |
dc.contributor.author | Kook, SH | - |
dc.contributor.author | Cho, DH | - |
dc.contributor.author | Park, KW | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2016-04-01T02:14:58Z | - |
dc.date.available | 2016-04-01T02:14:58Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.other | 2005-OAK-0000004909 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24749 | - |
dc.description.abstract | An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-pi model is developed. All the equivalent circuit elements are extracted analytically from S-parameter data only and without any numerical optimization. The proposed technique of the parameter extraction, differing from the previous ones, focuses on correcting the pad de-embedding error for an accurate and invariant extraction of intrinsic base resistance (R-bi), formulating a new parasitic substrate network, and improving the extraction procedure of transconductance (g(m)), dynamic base-emitter resistance (r(pi)), and base-emitter capacitance (C-pi) using the accurately extracted Rbi. The extracted parameters are frequency-independent and reliable due to elimination of any de-embedding errors. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.2-10.2 GHz over a wide range of bias points. Therefore, we believe that the proposed extraction method is a simple and reliable routine applicable to the optimization of transistor design, process control, and the improvement of VBIC compact model, especially for SiGe HBTs. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.subject | De-embedding | - |
dc.subject | equivalent circuit | - |
dc.subject | heterojunction bipolar transistor (HBT) | - |
dc.subject | parameter extraction | - |
dc.subject | SiGe | - |
dc.subject | small-signal model | - |
dc.subject | vertical bipolar intercompany (VBIC) | - |
dc.subject | SIGNAL EQUIVALENT-CIRCUIT | - |
dc.subject | TRANSISTORS | - |
dc.subject | PI | - |
dc.title | Direct parameter extraction of SiGeHBTs for the VBIC bipolar compact model | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/TED.2005.843 | - |
dc.author.google | Lee, K | - |
dc.author.google | Choi, KS | - |
dc.author.google | Kook, SH | - |
dc.author.google | Cho, DH | - |
dc.author.google | Park, KW | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 52 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 375 | - |
dc.relation.lastpage | 384 | - |
dc.contributor.id | 10106173 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.52, no.3, pp.375 - 384 | - |
dc.identifier.wosid | 000227395000012 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 384 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 375 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 52 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 36 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SIGNAL EQUIVALENT-CIRCUIT | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PI | - |
dc.subject.keywordAuthor | De-embedding | - |
dc.subject.keywordAuthor | equivalent circuit | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | parameter extraction | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | small-signal model | - |
dc.subject.keywordAuthor | vertical bipolar intercompany (VBIC) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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