DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baik, JM | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-04-01T02:18:26Z | - |
dc.date.available | 2016-04-01T02:18:26Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-12 | - |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.other | 2005-OAK-0000004738 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/24877 | - |
dc.description.abstract | The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900degreesC. Synchrotron radiation photoemission spectroscopy revealed that the Ga-Mn magnetic phases contributing to ferromagnetic properties increased. Mn-N binary phases such as Mn6N2.58 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga-Mn magnetic phases. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.relation.isPartOf | METALS AND MATERIALS INTERNATIONAL | - |
dc.subject | (Ga,Mn)N | - |
dc.subject | ion implantation | - |
dc.subject | ferromagnetic semiconductor | - |
dc.subject | SRPES | - |
dc.subject | MOLECULAR-BEAM-EPITAXY | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | THIN-FILMS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | FERROMAGNETISM | - |
dc.subject | (GA,MN)N | - |
dc.subject | NITRIDE | - |
dc.subject | DEFECTS | - |
dc.subject | PHASE | - |
dc.title | The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/BF03027418 | - |
dc.author.google | Baik, JM | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 10 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 555 | - |
dc.relation.lastpage | 558 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | METALS AND MATERIALS INTERNATIONAL | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCIE | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | METALS AND MATERIALS INTERNATIONAL, v.10, no.6, pp.555 - 558 | - |
dc.identifier.wosid | 000225797600009 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 558 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 555 | - |
dc.citation.title | METALS AND MATERIALS INTERNATIONAL | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-17144389053 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM-EPITAXY | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | (Ga,Mn)N | - |
dc.subject.keywordAuthor | ion implantation | - |
dc.subject.keywordAuthor | ferromagnetic semiconductor | - |
dc.subject.keywordAuthor | SRPES | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
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