In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition
SCIE
SCOPUS
- Title
- In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition
- Authors
- Park, YJ; Lee, DR; Lee, HH; Lee, HBR; Kim, H; Park, GC; Rhee, SW; Baik, S
- Date Issued
- 2011-02
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- We report an atomic layer deposition chamber for in-situ synchrotron X-ray scattering study of thin film growth. The chamber was designed for combined synchrotron X-ray reflectivity and two-dimensional grazing-incidence X-ray diffraction measurement to do a in-situ monitoring of ALD growth. We demonstrate ruthenium thermal ALD growth for the performance of the chamber. 10, 20, 30, 50, 70, 100, 150 and 250-cycled states are measured by X-ray scattering methods during ALD growth process. Growth rate is calculated from thickness values and the surface roughness of each state is estimated by X-ray reflectivity analysis. The crystal structure of initial growth state is observed by Grazing-incidence X-ray diffraction. These results indicate that in-situ X-ray scattering method is a promising analysis technique to investigate the initial physical morphology of ALD films.
- Keywords
- ALD Growth; In-Situ; Synchrotron X-Ray Scattering
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24964
- DOI
- 10.1166/JNN.2011.3399
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 11, no. 2, page. 1577 - 1580, 2011-02
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