DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kono, S | - |
dc.contributor.author | Saito, T | - |
dc.contributor.author | Kang, SH | - |
dc.contributor.author | Jung, WY | - |
dc.contributor.author | Kim, BY | - |
dc.contributor.author | Kawata, H | - |
dc.contributor.author | Goto, T | - |
dc.contributor.author | Kakefuda, Y | - |
dc.contributor.author | Yeom, HW | - |
dc.date.accessioned | 2016-04-01T02:22:11Z | - |
dc.date.available | 2016-04-01T02:22:11Z | - |
dc.date.created | 2011-03-21 | - |
dc.date.issued | 2010-07-15 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.other | 2010-OAK-0000022964 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25002 | - |
dc.description.abstract | The properties of surface conductivity (SC) of impurity-non-doped CVD diamond (001) samples were studied by various methods of sheet-resistance (R-s) measurement, Hall-effect measurement, XPS, UPS, SES, SR-PES, PEEM and 1D band simulation taking into account special emphases on deriving the information about the surface band diagram (SBD). The R-s values in UHV conditions were determined after no-annealing or 200 similar to 300 degrees C annealing in UHV. C 1 s XPS profiles were measured in detail in bulk-sensitive and surface-sensitive modes of photoelectron detection. The energy positions of valence band top (E-v) relative to the Fermi level (E-F) in UHV conditions after no-annealing or 200 similar to 300 degrees C annealing in UHV were determined. One of the samples was subjected to SR-PES, PEEM measurements. The SBDs were simulated by a band simulator from the determined R-s and E-v - E-F values for three samples based on the two models of surface conductivity, namely, so-called surface transfer doping (STD) model and downward band bending with shallow acceptor (DBB/SA) model. For the DBB/SA model, there appeared downward bends of SBDs toward the surface at a depth range of similar to 1 nm. C 1 s XPS profiles were then simulated from the simulated SBDs. Comparison of simulated C 1 s XPS profiles to the experimental ones showed that DBB/SA model reproduces the C 1 s XPS profiles properly. PEEM observation of a sample can be explained by the SBD based on the DBB/SA model. Mechanism of SC of CVD diamonds is discussed on the basis of these findings. It is suggested that the STD model combined with SBD of DBB/SA model explains the surface conductivity change due to environmental changes in actual cases of CVD diamond SC with the presence of surface E-F controlling defects. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | SURFACE SCIENCE | - |
dc.subject | Chemical vapor deposition | - |
dc.subject | Diamond | - |
dc.subject | (100) surface | - |
dc.subject | Surface conductivity | - |
dc.subject | Energy band diagram | - |
dc.subject | Electron spectroscopy | - |
dc.subject | Photoemission electron microscopy | - |
dc.subject | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject | ELECTRONIC-PROPERTIES | - |
dc.subject | CARBON FILMS | - |
dc.subject | GROWTH | - |
dc.subject | SPECTRA | - |
dc.subject | STATES | - |
dc.subject | SP(3) | - |
dc.subject | XPS | - |
dc.title | Band diagram for chemical vapor deposition diamond surface conductive layer: presence of downward band bending due to shallow acceptors | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1016/J.SUSC.2010.03.031 | - |
dc.author.google | Kono, S | - |
dc.author.google | Saito, T | - |
dc.author.google | Kang, SH | - |
dc.author.google | Jung, WY | - |
dc.author.google | Kim, BY | - |
dc.author.google | Kawata, H | - |
dc.author.google | Goto, T | - |
dc.author.google | Kakefuda, Y | - |
dc.author.google | Yeom, HW | - |
dc.relation.volume | 604 | - |
dc.relation.issue | 13-14 | - |
dc.relation.startpage | 1148 | - |
dc.relation.lastpage | 1165 | - |
dc.contributor.id | 10080808 | - |
dc.relation.journal | SURFACE SCIENCE | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SURFACE SCIENCE, v.604, no.13-14, pp.1148 - 1165 | - |
dc.identifier.wosid | 000279497700013 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 1165 | - |
dc.citation.number | 13-14 | - |
dc.citation.startPage | 1148 | - |
dc.citation.title | SURFACE SCIENCE | - |
dc.citation.volume | 604 | - |
dc.contributor.affiliatedAuthor | Yeom, HW | - |
dc.identifier.scopusid | 2-s2.0-77953286280 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.description.scptc | 15 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | CARBON FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SPECTRA | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | SP(3) | - |
dc.subject.keywordPlus | XPS | - |
dc.subject.keywordAuthor | Chemical vapor deposition | - |
dc.subject.keywordAuthor | Diamond | - |
dc.subject.keywordAuthor | (100) surface | - |
dc.subject.keywordAuthor | Surface conductivity | - |
dc.subject.keywordAuthor | Energy band diagram | - |
dc.subject.keywordAuthor | Electron spectroscopy | - |
dc.subject.keywordAuthor | Photoemission electron microscopy | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.