Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors
SCIE
SCOPUS
- Title
- Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors
- Authors
- Hong, K; Kim, SH; Yang, C; An, TK; Cha, H; Park, C; Park, CE
- Date Issued
- 2011-03
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We demonstrate the use of n-type N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm(2)/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm(2)/Vs). (C) 2011 Elsevier B.V. All rights reserved.
- Keywords
- n-Type organic field-effect transistor; Low work function; Conductive polymer; Source/drain electrodes; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; POLY(3,4-ETHYLENEDIOXYTHIOPHENE); PENTACENE; INTERFACES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/25064
- DOI
- 10.1016/J.ORGEL.2010.12.022
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 12, no. 3, page. 516 - 519, 2011-03
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