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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Grekhov, IV | - |
| dc.contributor.author | Kostina, LS | - |
| dc.contributor.author | Argunova, TS | - |
| dc.contributor.author | Belyakova, EI | - |
| dc.contributor.author | Rozkov, AV | - |
| dc.contributor.author | Shmidt, NM | - |
| dc.contributor.author | Yusupova, SA | - |
| dc.contributor.author | Je, JH | - |
| dc.date.accessioned | 2016-04-01T02:34:11Z | - |
| dc.date.available | 2016-04-01T02:34:11Z | - |
| dc.date.created | 2012-02-20 | - |
| dc.date.issued | 2010-08 | - |
| dc.identifier.issn | 1063-7826 | - |
| dc.identifier.other | 2010-OAK-0000022313 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/25373 | - |
| dc.description.abstract | A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si(1-x)Ge(x) wafers cut from Czochralski-grown crystals, is suggested. Si(1-x)Ge(x) layers no larger than 10 mu m thick in SiGe/SiO(2)/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si(1-x)Ge(x) layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250 degrees C are not accompanied by degradation of structural and electrical characteristics of Si(1-x)Ge(x) layers. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | MAIK NAUKA/INTERPERIODICA/SPRINGER | - |
| dc.relation.isPartOf | SEMICONDUCTORS | - |
| dc.subject | CZOCHRALSKI GROWTH | - |
| dc.subject | SILICON STRUCTURES | - |
| dc.subject | SI1-XGEX CRYSTALS | - |
| dc.subject | HOLE MOBILITY | - |
| dc.subject | STRAINED-SI | - |
| dc.subject | TECHNOLOGY | - |
| dc.subject | GE | - |
| dc.subject | SURFACE | - |
| dc.subject | LAYERS | - |
| dc.title | Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1134/S1063782610080269 | - |
| dc.author.google | Grekhov, IV | - |
| dc.author.google | Kostina, LS | - |
| dc.author.google | Argunova, TS | - |
| dc.author.google | Belyakova, EI | - |
| dc.author.google | Rozkov, AV | - |
| dc.author.google | Shmidt, NM | - |
| dc.author.google | Yusupova, SA | - |
| dc.author.google | Je, JH | - |
| dc.relation.volume | 44 | - |
| dc.relation.issue | 8 | - |
| dc.relation.startpage | 1101 | - |
| dc.relation.lastpage | 1105 | - |
| dc.contributor.id | 10123980 | - |
| dc.relation.journal | SEMICONDUCTORS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | SEMICONDUCTORS, v.44, no.8, pp.1101 - 1105 | - |
| dc.identifier.wosid | 000283541900026 | - |
| dc.date.tcdate | 2019-02-01 | - |
| dc.citation.endPage | 1105 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 1101 | - |
| dc.citation.title | SEMICONDUCTORS | - |
| dc.citation.volume | 44 | - |
| dc.contributor.affiliatedAuthor | Je, JH | - |
| dc.identifier.scopusid | 2-s2.0-77955796756 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 1 | - |
| dc.description.scptc | 1 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | CZOCHRALSKI GROWTH | - |
| dc.subject.keywordPlus | SILICON STRUCTURES | - |
| dc.subject.keywordPlus | SI1-XGEX CRYSTALS | - |
| dc.subject.keywordPlus | HOLE MOBILITY | - |
| dc.subject.keywordPlus | STRAINED-SI | - |
| dc.subject.keywordPlus | TECHNOLOGY | - |
| dc.subject.keywordPlus | GE | - |
| dc.subject.keywordPlus | SURFACE | - |
| dc.subject.keywordPlus | LAYERS | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 제정호JE, JUNG HO
- Dept of Materials Science & Enginrg