Crack-free interface in wafer-bonded Ge/Si by patterned grooves

Abstract

Crack-free Interfaces can be achieved in wafer-bonded Ge/Si by using Patterned grooves Using synchrotron radiation phase-contrast Imaging and scanning electron microscopy, we observed cracking that is Induced by thermal stresses in thin (h(Ge) <= 0 5h(Si)) Ge wafers on smooth Si substrates Theoretical calculation shows it remarkable reduction in thermal stresses in Ge wafer bonded to grooved Si substrate We demonstrate the fabrication of crack-free Ge/Si (h(Ge) = 0 5h(Si)) structure by patterned grooves, its confirmed by in ohmic I-V characteristic across the heterojunction (C) 2009 Acta Materialia Inc Published by Elsevier Ltd All rights reserved