DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, CH | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Jung, MH | - |
dc.date.accessioned | 2016-04-01T02:59:46Z | - |
dc.date.available | 2016-04-01T02:59:46Z | - |
dc.date.created | 2010-04-28 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 0304-8853 | - |
dc.identifier.other | 2009-OAK-0000020949 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26105 | - |
dc.description.abstract | A high-quality ferromagnetic GaMnN (Mn = 2.8at%) film was deposited onto a GaN buffer/Al2O3(00 01) at 885 degrees C using the metal-organic chemical vapor deposition (MOCVD) process. The GaMnN film shows a highly c-axis-oriented hexagonal wurtzite structure, implying that Mn doping into GaN does not influence the crystallinity of the film. No Mn-related secondary phases were found in the GaMnN film by means of a high flux X-ray diffraction analysis. The composition profiles of Ga, Mn, and N maintain nearly constant levels in depth profiles of the GaMnN film. The binding energy peak of the Mn 2p(3/2) orbital was observed at 642.3eV corresponding to the Mn(III) oxidation state of MnN. The presence of metallic Mn clusters(binding energy: 640.9eV) in the GaMnN film was excluded. A broad yellow emission around 2.2eV as well as a relatively weak near-band-edge emission at 3.39eV was observed in a Mn-doped GaN film, while the undoped GaN film only shows a near-band-edge emission at 3.37eV. The Mn-doped GaN film showed n-type semiconducting characteristics; the electron carrier concentration was 1.2 X 10(21)/cm(3) and the resistivity was 3.9 X 10(-3) Omega cm. Ferromagnetic hysteresis loops were observed at 300K with a magnetic field parallel and perpendicular to the ab plane. The zero field-cooled and field-cooled curves at temperatures ranging from 10 to 350K strongly indicate that the GaMnN film is ferromagnetic atleast upto 350K. A coercive field of 250 Oe and effective magnetic moment of 0.0003 mu(B)/Mn were obtained. The n-type semiconducting behavior plays a role in inducing ferromagnetism in the GaMnN film, and the observed ferromagnetism is appropriately explained by a double exchange mechanism. (C) 2009 Published by Elsevier B.V. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
dc.subject | Metal-organic chemical vapor deposition | - |
dc.subject | Mn-doped GaN | - |
dc.subject | Diluted magnetic semiconductor | - |
dc.subject | Spintronics | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | DILUTED MAGNETIC SEMICONDUCTORS | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | MN CONCENTRATION | - |
dc.subject | MBE GROWTH | - |
dc.subject | TEMPERATURE | - |
dc.subject | (GA,MN)N | - |
dc.subject | SPINTRONICS | - |
dc.subject | PROPERTY | - |
dc.title | Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor depositionCharacterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1016/j.jmmm.2009.05.017 | - |
dc.author.google | Choi, CH | - |
dc.author.google | Kim, SH | - |
dc.author.google | Jung, MH | - |
dc.relation.volume | 321 | - |
dc.relation.issue | 23 | - |
dc.relation.startpage | 3833 | - |
dc.relation.lastpage | 3838 | - |
dc.contributor.id | 10077433 | - |
dc.relation.journal | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.321, no.23, pp.3833 - 3838 | - |
dc.identifier.wosid | 000269721800001 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 3838 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 3833 | - |
dc.citation.title | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
dc.citation.volume | 321 | - |
dc.contributor.affiliatedAuthor | Kim, SH | - |
dc.identifier.scopusid | 2-s2.0-69949188856 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | MN CONCENTRATION | - |
dc.subject.keywordPlus | MBE GROWTH | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PROPERTY | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordAuthor | Metal-organic chemical vapor deposition | - |
dc.subject.keywordAuthor | Mn-doped GaN | - |
dc.subject.keywordAuthor | Diluted magnetic semiconductor | - |
dc.subject.keywordAuthor | Spintronics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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