DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, S. J. | - |
dc.contributor.author | Lee, Sung Kyun | - |
dc.contributor.author | Jo, Minho | - |
dc.contributor.author | Lee, Chang-Soo | - |
dc.contributor.author | Kwon, Soonju | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | 권순주 | - |
dc.date.accessioned | 2016-04-01T03:18:00Z | - |
dc.date.available | 2016-04-01T03:18:00Z | - |
dc.date.issued | 2008-07 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.identifier.citation | v.53 | - |
dc.identifier.citation | no.1 | - |
dc.identifier.citation | pp.253-257 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.other | 2010-OAK-0000020351 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26483 | - |
dc.description.abstract | We have deposited transparent conducting Al-doped ZnO films on glass and Si substrates by atomic layer deposition (ALD) at a relatively low substrate temperature of 200 degrees C and evaluated the electrical and the optical properties of these films. For Al-doped ZnO film growth by using the ALD process, diethylzinc (DEZ) and trimethylaluminum (TMA) were used as metal precursors and water as a reactant. The process conditions were optimized by varying the deposition temperature, The TMA:DEZ cycle ratio and TMA exposure time and an Al-doped ZnO film with a resistivity of 1.09 x 10(-3) Omega.cm, a carrier concentration of 1.16 x 10(21) cm(-3) and a carrier mobility of 5.0 cm(2)/V.S was attained. In addition, the Al-doped ZnO film was focused to have a relevant transmittance as a transparent conducting electrode. The transmittances of the film in the visible region were in excess of 80% (450 nm <= lambda <= 1100 nm) and 65% (380 nm <= lambda <= 450 nm). | - |
dc.description.statementofresponsibility | X | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | transparent conducting oxides | - |
dc.subject | atomic layer deposition | - |
dc.subject | Al-doped ZnO films | - |
dc.subject | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.subject | AL FILMS | - |
dc.title | In-situ doping during ZnO atomic layer deposition | - |
dc.type | Conference | - |
dc.contributor.college | 신소재공학과 | - |
dc.author.google | Lim, S. J. | - |
dc.author.google | Lee, Sung Kyun | - |
dc.author.google | Jo, Minho | - |
dc.author.google | Lee, Chang-Soo | - |
dc.author.google | Kwon, Soonju | - |
dc.author.google | Kim, Hyungjun | - |
dc.relation.volume | 53 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 253 | - |
dc.relation.lastpage | 257 | - |
dc.contributor.id | 10071829 | - |
dc.publisher.location | KO | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.docType | Proceedings Paper | - |
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