Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt
- Title
- Degradation of the Deposition Blocking Layer During Area-Selective Plasma-Enhanced Atomic Layer Deposition of Cobalt
- Authors
- Lee, HBR; Kim, J; Kim, H; Kim, WH; Lee, JW; Hwang, I; null
- Date Issued
- 2010-01
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- The effects of plasma on the degradation of the deposition blocking layer during area-selective atomic layer deposition were investigated. Co atomic layer deposition (ALD) processes were developed by using Co(iPr-AMD)(2) (bis (N,N'-diisopropylacetamidinato)cobalt(II)) as a precursor, and two different reactants, NH3 gas for thermal ALD (TH-ALD) and NH3 plasma for plasma-enhanced ALD (PE-ALD). TH- and PE-ALD were applied to area selective ALD (AS-ALD) by using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Both ALD processes produced pure Go films with resistivities as low as 50 mu Omega cm. For PE-ALD, however, no selective deposition was achieved due to a degradation of the OTS hydrophobicity caused by the NH3 plasma exposure. The effects of the plasma on the blocking efficiency of SAM were studied.
- Keywords
- Atomic layer deposition; Cobalt; Area-selective deposition; Self-assembled monolayer; SELF-ASSEMBLED MONOLAYERS; THIN-FILMS; METAL; KINETICS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26594
- DOI
- 10.3938/JKPS.56.104
- ISSN
- 0374-4884
- Article Type
- Article
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.