DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chan Su Jung | - |
dc.contributor.author | Han Sung Kim | - |
dc.contributor.author | Hyung Soon Im | - |
dc.contributor.author | Kidong Park | - |
dc.contributor.author | Jeunghee Park | - |
dc.contributor.author | Jae-Pyoung Ahn | - |
dc.contributor.author | Yoo, SJ | - |
dc.contributor.author | Jin-Gyu Kim | - |
dc.contributor.author | Jae Nyeong Kim | - |
dc.contributor.author | Shim, JH | - |
dc.date.accessioned | 2016-04-01T07:35:09Z | - |
dc.date.available | 2016-04-01T07:35:09Z | - |
dc.date.created | 2015-07-09 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | 2015-OAK-0000033418 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/26660 | - |
dc.description.abstract | Phase-change nanowires (NWs) have emerged as critical materials for fast-switching nonvolatile memory devices. In this study, we synthesized a series of mGeTe.Bi2Te3 (GBT) pseudobinary alloy NWsGe(3)Bi(2)Te(6) (m = 3), Ge4Bi2Te7 (m = 4), Ge5Bi2Te8 (m = 5), Ge6Bi2Te9 (m = 6), and Ge8Bi2Te11 (m = 8)and investigated their composition-dependent thermal stabilities and electrical properties. As m decreases, the phase of the NWs evolves from the cubic (C) to the hexagonal (H) phase, which produces unique superlattice structures that consist of periodic 2.2-3.8 nm slabs for m = 3-8. In situ temperature-dependent transmission electron microscopy reveals the higher thermal stability of the compositions with lower m values, and a phase transition from the H phase into the single-crystalline C phase at high temperatures (400 degrees C). First-principles calculations, performed for the superlattice structures (m = 1-8) of GBT and mGeTe.Sb2Te3 (GST), show an increasing stability of the H phase (versus the C phase) with decreasing m; the difference in stability being more marked for GBT than for GST. The calculations explain remarkably the phase evolution of the GBT and GST NWs as well as the composition-dependent thermal stabilities. Measurement of the current-voltage curves for individual GBT NWs shows that the resistivity is in the range 3-25 mO.cm, and the resistivity of the H phase is lower than that of the C phase, which has been supported by the calculations. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.title | In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Psedobinary mGeTe center dot Bi2Te3 (m=3-8) Nanowires and First-Principles Calculations | - |
dc.type | Article | - |
dc.contributor.college | 첨단원자력공학부 | - |
dc.identifier.doi | 10.1021/ACS.NANOLETT.5B00755 | - |
dc.author.google | Jung, CS | - |
dc.author.google | Kim, HS | - |
dc.author.google | Im, HS | - |
dc.author.google | Park, K | - |
dc.author.google | Park, J | - |
dc.author.google | Ahn, JP | - |
dc.author.google | Yoo, SJ | - |
dc.author.google | Kim, JG | - |
dc.author.google | Kim, JN | - |
dc.author.google | Shim, JH | - |
dc.relation.volume | 15 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 3923 | - |
dc.relation.lastpage | 3930 | - |
dc.contributor.id | 10135228 | - |
dc.relation.journal | NANO LETTERS | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.15, no.6, pp.3923 - 3930 | - |
dc.identifier.wosid | 000356316900040 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 3930 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 3923 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 15 | - |
dc.contributor.affiliatedAuthor | Shim, JH | - |
dc.identifier.scopusid | 2-s2.0-84931267860 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 7 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PHASE-CHANGE MATERIALS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | CHANGE MEMORY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SPEED | - |
dc.subject.keywordPlus | GE2SB2TE5 | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | DIFFRACTION | - |
dc.subject.keywordPlus | TRANSITIONS | - |
dc.subject.keywordPlus | NONVOLATILE | - |
dc.subject.keywordAuthor | Phase-change materials | - |
dc.subject.keywordAuthor | GeTe center dot Bi2Te3 | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | superlattice | - |
dc.subject.keywordAuthor | electrical conductivity | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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