Bandgap Tuning with Thermal Residual Stresses Induced in a Quantum Dot
SCIE
SCOPUS
- Title
- Bandgap Tuning with Thermal Residual Stresses Induced in a Quantum Dot
- Authors
- Kong, EH; Joo, SH; Park, HJ; Song, S; Chang, YJ; Kim, HS; Jang, HM
- Date Issued
- 2014-09-24
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Lattice distortion induced by residual stresses can alter electronic and mechanical properties of materials significantly. Herein, a novel way of the bandgap tuning in a quantum dot (QD) by lattice distortion is presented using 4-nm-sized CdS QDs grown on a TiO2 particle as an application example. The bandgap tuning (from 2.74 eV to 2.49 eV) of a CdS QD is achieved by suitably adjusting the degree of lattice distortion in a QD via the tensile residual stresses which arise from the difference in thermal expansion coefficients between CdS and TiO2. The idea of bandgap tuning is then applied to QD-sensitized solar cells, achieving approximate to 60% increase in the power conversion efficiency by controlling the degree of thermal residual stress. Since the present methodology is not limited to a specific QD system, it will potentially pave a way to unexplored quantum effects in various QD-based applications.
- Keywords
- bandgap tuning; quantum dots; residual stress; lattice distortion; photovoltaics; IONIC LAYER ADSORPTION; CADMIUM-SULFIDE; NANOROD ARRAY; PERFORMANCE; NANOCRYSTALS; TIO2
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26722
- DOI
- 10.1002/SMLL.201400392
- ISSN
- 1613-6810
- Article Type
- Article
- Citation
- SMALL, vol. 10, no. 18, page. 3678 - 3684, 2014-09-24
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- There are no files associated with this item.
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