DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, NH | - |
dc.contributor.author | Choi, HW | - |
dc.contributor.author | Kang, H | - |
dc.contributor.author | Kang, B | - |
dc.date.accessioned | 2016-04-01T08:16:41Z | - |
dc.date.available | 2016-04-01T08:16:41Z | - |
dc.date.created | 2010-01-19 | - |
dc.date.issued | 2009-11 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2009-OAK-0000019798 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27615 | - |
dc.description.abstract | An experimental method of extracting the effective channel length L-eff from measured gate tunneling current (I-g) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I-gsd) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I-gc) was obtained by subtracting I-gsd from I-g. L-eff was calculated using a linear extrapolation of the I-gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L-eff which does not require any additional assumptions and parameter extraction. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | Effective channel length | - |
dc.subject | gate-source/drain overlap length | - |
dc.subject | gate tunneling current | - |
dc.subject | MOSFET | - |
dc.subject | SHIFT | - |
dc.title | Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LED.2009.203 | - |
dc.author.google | Lee, NH | - |
dc.author.google | Choi, HW | - |
dc.author.google | Kang, H | - |
dc.author.google | Kang, B | - |
dc.relation.volume | 30 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 1191 | - |
dc.relation.lastpage | 1193 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.30, no.11, pp.1191 - 1193 | - |
dc.identifier.wosid | 000271151500025 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 1193 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1191 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 30 | - |
dc.contributor.affiliatedAuthor | Kang, B | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Effective channel length | - |
dc.subject.keywordAuthor | gate-source/drain overlap length | - |
dc.subject.keywordAuthor | gate tunneling current | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.