DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bozanic, A | - |
dc.contributor.author | Majlinger, Z | - |
dc.contributor.author | Petravic, M | - |
dc.contributor.author | Gao, Q | - |
dc.contributor.author | Llewellyn, D | - |
dc.contributor.author | Crotti, C | - |
dc.contributor.author | Yang, YW | - |
dc.contributor.author | Kim, KJ | - |
dc.contributor.author | Kim, B | - |
dc.contributor.author | null | - |
dc.date.accessioned | 2016-04-01T08:23:08Z | - |
dc.date.available | 2016-04-01T08:23:08Z | - |
dc.date.issued | 2009-08 | - |
dc.identifier.citation | VACUUM | - |
dc.identifier.citation | v.84 | - |
dc.identifier.citation | no.1 | - |
dc.identifier.citation | pp.37-40 | - |
dc.identifier.issn | 0042-207X | - |
dc.identifier.other | 2009-OAK-0000019261 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27852 | - |
dc.description.abstract | We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based X-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N(2), in all samples under consideration. The presence of N(2) produces a sharp resonance in low-resolution NEXAFS spectra at around 400.8 eV, showing the characteristic vibrational fine structure in high-resolution measurements. At the same time, a new peak, shifted towards higher binding energies, emerges in all N 1s photoemission spectra. We have found a shift of 7.6 eV for In-based compounds and 6.7 eV for Ga-based compounds. Our results demonstrate that NEXAFS and core-level XPS are complementary techniques that form a powerful combination for studying molecular nitrogen in compound semiconductors, such as GaSb, InSb, GaAs, InN, GaN or ZnO. (C) 2009 Elsevier Ltd. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | XPS | - |
dc.subject | NEXAFS | - |
dc.subject | Semiconductors | - |
dc.subject | Molecular nitrogen | - |
dc.subject | CORE-LEVEL PHOTOEMISSION | - |
dc.subject | HIGH-RESOLUTION | - |
dc.subject | FINE-STRUCTURE | - |
dc.subject | ENERGY | - |
dc.subject | SURFACES | - |
dc.subject | NITRIDATION | - |
dc.subject | GAN | - |
dc.title | Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies | - |
dc.type | Conference | - |
dc.identifier.doi | 10.1016/J.VACUUM.2009.04.020 | - |
dc.author.google | Bozanic, A | - |
dc.author.google | Majlinger, Z | - |
dc.author.google | Petravic, M | - |
dc.author.google | Gao, Q | - |
dc.author.google | Llewellyn, D | - |
dc.author.google | Crotti, C | - |
dc.author.google | Yang, YW | - |
dc.author.google | Kim, KJ | - |
dc.author.google | Kim, B | - |
dc.relation.volume | 84 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 37 | - |
dc.relation.lastpage | 40 | - |
dc.publisher.location | UK | - |
dc.relation.journal | VACUUM | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.docType | Proceedings Paper | - |
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