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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Son, JH | - |
| dc.contributor.author | Yu, HK | - |
| dc.contributor.author | Song, YH | - |
| dc.contributor.author | Lee, JL | - |
| dc.date.accessioned | 2016-04-01T08:24:08Z | - |
| dc.date.available | 2016-04-01T08:24:08Z | - |
| dc.date.created | 2009-10-08 | - |
| dc.date.issued | 2008-12 | - |
| dc.identifier.issn | 1738-8090 | - |
| dc.identifier.other | 2008-OAK-0000019171 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/27888 | - |
| dc.description.abstract | A low resistance, thermally stable reflective ohmic contact oil p-type GaN was developed using Ru/Ag over-layers oil ail oxidized Ni/Au contact. A specific contact resistivity of <8.4 x 10(-5) Omega cm(2) was maintained during annealing from 300 degrees C to 600 degrees C in O-2 ambient. In addition, the Ni/Au/Ru/Ag contact showed excellent thermal stability after annealing at 500 degrees C for 24 hrs. The RuO2 layer oxidized during oxidation annealing acted as a diffusion barrier for intermixing, of the Ag reflector with the oxidized Ni/Au contact, resulting in enhancement of the thermal stability of the contact. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | KOREAN INST METALS MATERIALS | - |
| dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
| dc.subject | p-GaN | - |
| dc.subject | ohmic contact | - |
| dc.subject | LEDs | - |
| dc.subject | diffusion barrier | - |
| dc.subject | thermal stability | - |
| dc.subject | LIGHT-EMITTING-DIODES | - |
| dc.subject | OXIDIZED NI/AU | - |
| dc.title | Low Resistance and Themarlly Stable Ohmic Contact on p-type GaN Using a RuO2 Diffusion Barrier | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.author.google | Son J.H., Yu H.K., Song Y.H., Lee J.-L. | - |
| dc.relation.volume | 4 | - |
| dc.relation.issue | 4 | - |
| dc.relation.startpage | 157 | - |
| dc.relation.lastpage | 160 | - |
| dc.contributor.id | 10105416 | - |
| dc.relation.journal | ELECTRONIC MATERIALS LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCIE | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.4, no.4, pp.157 - 160 | - |
| dc.identifier.wosid | 000261744200003 | - |
| dc.date.tcdate | 2019-02-01 | - |
| dc.citation.endPage | 160 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 157 | - |
| dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
| dc.citation.volume | 4 | - |
| dc.contributor.affiliatedAuthor | Lee, JL | - |
| dc.identifier.scopusid | 2-s2.0-69049110673 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 9 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | p-GaN | - |
| dc.subject.keywordAuthor | ohmic contact | - |
| dc.subject.keywordAuthor | LEDs | - |
| dc.subject.keywordAuthor | diffusion barrier | - |
| dc.subject.keywordAuthor | thermal stability | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.description.journalRegisteredClass | other | - |
| dc.relation.journalResearchArea | Materials Science | - |
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg