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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, CC | - |
| dc.contributor.author | Kim, JK | - |
| dc.contributor.author | Lee, JL | - |
| dc.contributor.author | Je, JH | - |
| dc.contributor.author | Yi, MS | - |
| dc.contributor.author | Noh, DY | - |
| dc.contributor.author | Hwu, Y | - |
| dc.contributor.author | Ruterana, P | - |
| dc.contributor.author | 김종규 | - |
| dc.date.accessioned | 2016-04-01T08:31:18Z | - |
| dc.date.available | 2016-04-01T08:31:18Z | - |
| dc.date.issued | 2001-11 | - |
| dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | - |
| dc.identifier.citation | v.188 | - |
| dc.identifier.citation | no.1 | - |
| dc.identifier.citation | pp.379-382 | - |
| dc.identifier.issn | 0031-8965 | - |
| dc.identifier.other | 2001-OAK-0000018770 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28162 | - |
| dc.description.abstract | We investigated the micro-structural and electrical behavior of Ni/Au contacts on GaN(0001) during annealing in N-2 and in air. The formation of a Ni4N phase deteriorates the contact resistivity if annealed in N2. Annealing in air, however, dramatically improves it. The oxidation, by creating, them more energy favorable Ni-O bonds, seems to be the recipe to successfully suppress the formation of Ni4N which otherwise would be enhanced significantly by the presence of Au as a catalyst. | - |
| dc.description.statementofresponsibility | X | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.subject | P-TYPE GAN | - |
| dc.subject | FIELD-EFFECT TRANSISTORS | - |
| dc.subject | DIODES | - |
| dc.title | Au catalyzed structural and electrical evolution of Ni/Au contact to GaN | - |
| dc.type | Conference | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.author.google | Kim, CC | - |
| dc.author.google | Kim, JK | - |
| dc.author.google | Lee, JL | - |
| dc.author.google | Je, JH | - |
| dc.author.google | Yi, MS | - |
| dc.author.google | Noh, DY | - |
| dc.author.google | Hwu, Y | - |
| dc.author.google | Ruterana, P | - |
| dc.relation.volume | 188 | - |
| dc.relation.issue | 1 | - |
| dc.relation.startpage | 379 | - |
| dc.relation.lastpage | 382 | - |
| dc.contributor.id | 10100864 | - |
| dc.publisher.location | GE | - |
| dc.relation.journal | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCIE | - |
| dc.collections.name | Conference Papers | - |
| dc.type.docType | Proceedings Paper | - |
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