DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Cho, YH | - |
dc.contributor.author | Kwak, JS | - |
dc.contributor.author | Nam, OH | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Park, Y | - |
dc.contributor.author | Kim, T | - |
dc.contributor.author | Kim, JW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-04-01T08:31:20Z | - |
dc.date.available | 2016-04-01T08:31:20Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.other | 2001-OAK-0000018767 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28163 | - |
dc.description.abstract | Thermal stabilities of Pt and Pt/Au ohmic contacts on p-type GaN were studied through high temperature thermal stress test at 550 degreesC. The long-term thermal stability of the contact resistivity for the Pt/Au contact was better than that for the Pt contat oil p-type GaN. Considering the Free energy change for the formation of nitrogen and gallium molecules, the outdiffusion of N atoms continuously proceeded, but that of Ga atoms was suppressed during the thermal stress for the Pt contacts. Thus. N vacancies, act as donor for electrons, were produced below the contact leading to rapid increase of contact resistivity during the thermal stress. For the Pt/Au contact, Ga atoms outdiffused through grain boundaries of Pt and dissolved to the Au overlayer producing a number of Vi:, at subsurface of p-type GaN below the contact, resulting in the increase of net hole concentration below the Pt/Au contact. Thus: the contact resistivity was not increased further under long-time thermal stress. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.subject | N-TYPE GAN | - |
dc.title | The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.author.google | Kim, JK | - |
dc.author.google | Cho, YH | - |
dc.author.google | Kwak, JS | - |
dc.author.google | Nam, OH | - |
dc.author.google | Lee, J | - |
dc.author.google | Park, Y | - |
dc.author.google | Kim, T | - |
dc.author.google | Kim, JW | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 39 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 23 | - |
dc.relation.lastpage | 27 | - |
dc.contributor.id | 10100864 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.23 - 27 | - |
dc.identifier.wosid | 000169870600006 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 27 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 23 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 39 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Physics | - |
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