Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition
SCIE
SCOPUS
- Title
- Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition
- Authors
- Ramaiah, KS; Bhat, I; Chow, TP; Kim, JK; Schubert, EF; Johnstone, D
- Date Issued
- 2007-03-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We have systematically studied G and Si-face n-4H-SiC wafers before and after the growth of epitaxial layers using an optical Nomarski microscope (ONM) and an atomic force microscope (AFM). In particular, a number of defects such as micropipes, microtubes, threading edge dislocations, and screw dislocations are identified in H-2 etched C-face and Si-face SiC wafers. The properties of ohmic contact formed on the backside of the G and Si-face wafers by metallization are investigated by ONM and AFM to observe the effect of G and Si-face polarities. In addition to these analyses, X-ray diffraction studies are done on the metallized Si- and C-faces to determine formation of any silicides. Ni-based Schottky junctions made on the wafers and on the epitaxial layers grown on the G and Si-face 4H-SiC are studied by means of I-V and capacitance-voltage (C-V) techniques. The difference in characteristics between the Schottky junctions on the wafer and on the epilayer is analyzed. The C-V mapping is done on several Schottky diodes, in order to find the effect of hillocks and carrot-like defects in the junctions. The Schottky junction barrier heights decreased if carrot-like defects are presented in the epilayer. The variation of capacitance with temperature for the Schottky junctions is studied by using C-V measurements and their results are discussed with effect of temperature. (c) 2006 Elsevier B.V. All rights reserved.
- Keywords
- chemical vapor deposition; 4-H SiC; C-face; Si-face; XRD; AFM; optical micrograph; I-V; C-N; BASAL-PLANE DISLOCATION; SILICON-CARBIDE; SCHOTTKY DIODES; CONTACTS; NICKEL; EPILAYERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28185
- DOI
- 10.1016/J.PHYSB.2006.08.051
- ISSN
- 0921-4526
- Article Type
- Article
- Citation
- PHYSICA B-CONDENSED MATTER, vol. 391, no. 1, page. 35 - 41, 2007-03-15
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