EFFECT OF CHIP GEOMETRY ON BREAKDOWN VOLTAGE OF GAINN LIGHT-EMITTING DIODES
SCIE
SCOPUS
- Title
- EFFECT OF CHIP GEOMETRY ON BREAKDOWN VOLTAGE OF GAINN LIGHT-EMITTING DIODES
- Authors
- Cho, J; Zhu, D; Schubert, EF; Kim, JK
- Date Issued
- 2009-07-02
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Abstract
- Reverse leakage current characteristics of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) with various chip geometries are examined. The effect of chip geometry on the reverse leakage current is negligible at a low voltage, but becomes apparent at a high voltage. The reverse breakdown voltage of LEDs decreases as the angle of vertex in the chip geometry decreases presumably because of a highly localised electric field strength near the vertex. This suggests that a chip geometry with a rounded vertex is suitable for reliable high-power LEDs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28212
- DOI
- 10.1049/EL.2009.0470
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 45, no. 14, page. 755 - 756, 2009-07-02
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.