Electronic Structure of Co-doped ZnO Thin Films by X-ray Absorption and Emission Spectroscopy
- Title
- Electronic Structure of Co-doped ZnO Thin Films by X-ray Absorption and Emission Spectroscopy
- Authors
- GAUTAM, S; THAKUR, P; CHAE, KH; CHANG, GS; SUBRAMANAIN, M; JAYAVEL, R; ASOKAN, K; null
- Date Issued
- 2009-07
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- The electronic structure of Co-doped ZuO thin films, synthesized with a nominal composition of Zn1-xCoxO (x = 0.03, 0.05, 0.7
0.10, and 0.15) by using spray pyrolysis method, has been investigated using near edge X-ray absorption fine structure (NEXAFS) measurements at the O K- and the Co L-3,L-2-edges and using resonant inelastic X-ray scattering (RIXS) measurements at Co L-3,L-2-edge. All the prepared Zn1-xCoxO thin Films showed ferromagnetic behavior at room temperature, as measured by using an alternating gradient force magnetometer (AGFM). The intensity of the pre-edge spectral feature at the O K-edge increases with the Co concentration, which clearly reveals that there is strong hybridization of O 2p - Co 3d atoms in the ZnO matrix. Spectral features of the Co L-3,L-2-edge NEXAFS exhibit multiple absorption peaks and are similar to those of Co2+ ions coordinated in tetrahedral symmetry by four oxygen atoms. These results clearly demonstrate that Co is in a 2+ state, substituting at the Zn site. Co L-3,L-2-edge RIXS measurements show that the substitution by Co atoms can explain the magnetic interaction in Co-doped ZnO.
- Keywords
- X-ray absorption; X-ray emission; Diluted magnetic semiconductors; Oxygen vacancy; ROOM-TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; SPINTRONICS; DESIGN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28304
- ISSN
- 0374-4884
- Article Type
- Conference
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- There are no files associated with this item.
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