Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
- Title
- Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
- Authors
- YOO, OS; OH, J; MIN, KS; KANG, CY; LEE, BH; LEE, KT; NA, MK; KWON, HM; MAJHI, P; TSENG, HH; JAMMY, R; WANG, JS; LEE, HD; null
- Date Issued
- 2009-03
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance (G(m)) and enhanced drive current. In addition, lower threshold voltage shift and G(m,max) degradation are observed during NBTI stress. The primary reason for these characteristics is attributed to the improved interface quality at the high-k dielectric/substrate interface. Charge pumping was used to verify the presence of lower density of states in Ge pMOSFETs with a Si cap. (C) 2008 Elsevier B.V. All rights reserved.
- Keywords
- Ge pMOSFET; NBTI; Interface trap; High mobility channel; Charge pumping; HFO2 THIN-FILMS; SUBSTRATE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28341
- DOI
- 10.1016/J.MEE.2008.0
- ISSN
- 0167-9317
- Article Type
- Conference
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- There are no files associated with this item.
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