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Cited 88 time in webofscience Cited 84 time in scopus
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dc.contributor.authorKim, KS-
dc.contributor.authorLee, HS-
dc.contributor.authorYang, JA-
dc.contributor.authorJo, MH-
dc.contributor.authorHahn, SK-
dc.date.accessioned2016-04-01T08:39:03Z-
dc.date.available2016-04-01T08:39:03Z-
dc.date.created2009-08-24-
dc.date.issued2009-06-10-
dc.identifier.issn0957-4484-
dc.identifier.other2009-OAK-0000018028-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/28456-
dc.description.abstractAn aptamer-functionalized silicon-nanowire (Si-NW) field effect transistor (FET) biosensor was successfully fabricated, characterized and applied to real-time electrical detection of binding with the target protein for biomedical applications. Surface modifications were carried out using 3-aminopropyl diethoxysilane and succinic anhydride to introduce amine and carboxyl groups onto Si substrates. Anti-thrombin aptamers with 5'-end amine groups were chemically grafted onto the surface-modified Si substrates through amide bond formation. Atomic force microscopic (AFM) analyses confirmed the successful immobilization of anti-thrombin aptamers on Si-NWs and their binding with thrombin samples. The anti-thrombin aptamers bound to Si-NWs through the linker appeared to have a mean height of approx. 4 nm and the thrombin/aptamer complex to have a mean height of approx. 8 nm. Fluorescence micrographs visualized the FITC-labeled thrombin after binding to anti-thrombin aptamers immobilized on Si-NWs. Furthermore, the anti-thrombin Si-NW FET biosensor was successfully applied to the real-time detection of electronic signals during and after binding with a thrombin sample at a concentration of approx. 330 pmol l(-1) and the thrombin in blood samples.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfNANOTECHNOLOGY-
dc.titleThe fabrication, characterization and application of aptamer- functionalized Si-nanowire FET biosensors-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1088/0957-4484/20/23/235501-
dc.author.googleKim, KS-
dc.author.googleLee, HS-
dc.author.googleYang, JA-
dc.author.googleJo, MH-
dc.author.googleHahn, SK-
dc.relation.volume20-
dc.relation.issue23-
dc.contributor.id10176415-
dc.relation.journalNANOTECHNOLOGY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationNANOTECHNOLOGY, v.20, no.23, pp.1 - 6-
dc.identifier.wosid000266219800014-
dc.date.tcdate2019-02-01-
dc.citation.endPage6-
dc.citation.number23-
dc.citation.startPage1-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume20-
dc.contributor.affiliatedAuthorJo, MH-
dc.contributor.affiliatedAuthorHahn, SK-
dc.identifier.scopusid2-s2.0-67649196721-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc66-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusLABEL-FREE-
dc.subject.keywordPlusRNA-
dc.subject.keywordPlusDNA-
dc.subject.keywordPlusSELECTION-
dc.subject.keywordPlusLIGANDS-
dc.subject.keywordPlusINVITRO-
dc.subject.keywordPlusARRAYS-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조문호JO, MOON HO
Dept of Materials Science & Enginrg
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