STRAIN COMPENSATED INGAAS-GAASP-INGAP LASER
SCIE
SCOPUS
- Title
- STRAIN COMPENSATED INGAAS-GAASP-INGAP LASER
- Authors
- Dutta, NK; Hobson, WS; Vakhshoori, D; Han, H; Freeman, PN; deJong, JF; Lopata, J
- Date Issued
- 1996-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- The performance characteristics of InGaAs-GaAsP-InGaP strain compensated laser emitting near 1 mu m are reported, The ridge waveguide lasers have room temperature threshold current of 18 mA and differential quantum efficiency of 0.45 W/A/facet. The linewidth enhancement factor is smaller and gain coefficient is larger for these strain compensated lasers compared to that for conventional strained layer laser, This may be due to higher effective compressive strain in the light emitting layer of these devices which reduces the effective mass, The observed larger gain coefficient is consistent with the measured larger relaxation oscillation frequency of these lasers compared to that for a conventional strained layer laser.
- Keywords
- QUANTUM-WELL LASERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28461
- DOI
- 10.1109/68.502248
- ISSN
- 1041-1135
- Article Type
- Article
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 8, no. 7, page. 852 - 854, 1996-07
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- There are no files associated with this item.
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