Re-emergent direct-indirect band gap transitions in carbon nanotubes under shear strains
SCIE
SCOPUS
- Title
- Re-emergent direct-indirect band gap transitions in carbon nanotubes under shear strains
- Authors
- Choi, SM; Jhi, SH
- Date Issued
- 2008-04
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- Electronic structures of single-walled carbon nanotubes under varying shear strains are studied with the use of pseudopotential density functional method. We present a new scheme to induce shear strains in one-dimensional materials like nanotubes without introducing artificial edge atoms. It is found that the band gap of semiconducting zigzag nanotubes exhibits reemerging direct-indirect transitions as they are twisted. The breaking of the three-fold rotational symmetry and the electron-hole symmetry of corresponding graphitic band structures under shear is shown to be the origin of the behavior in the band gap. (C) 2008 Elsevier Ltd. All rights reserved.
- Keywords
- ELECTRONIC-STRUCTURE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28836
- DOI
- 10.1016/j.carbon.2008.02.005
- ISSN
- 0008-6223
- Article Type
- Article
- Citation
- CARBON, vol. 46, no. 5, page. 773 - 777, 2008-04
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