Reduction of Transient Far-End Crosstalk Voltage and Jitter in DIMM Connectors for DRAM Interface

Abstract

The transient far-end crosstalk voltage and the crosstalk-induced jitter or dual in-line memory module (DIMM) connectors are reduced by about 80% by increasing the mutual capacitance between DIMM connector plus with the additional interdigitated-comb-shaped metal-stub patterns on the mother-board. It was confirmed by the far-end crosstalk voltage waveform measurements using TDR and the eye diagram measurements at the data rates of 15 Mbps, 100 Mbps, and 3 Gbps. This reduction technique can be applied to the connectors where the inductive coupling ratio is larger than the capacitive coupling ratio.