Effect of fluorine chemistry in the remote plasma enhanced chemical vapor deposition of silicon films from Si2H6-SiF4-H-2
SCIE
SCOPUS
- Title
- Effect of fluorine chemistry in the remote plasma enhanced chemical vapor deposition of silicon films from Si2H6-SiF4-H-2
- Authors
- Kim, DH; Lee, IJ; Rhee, SW; Moon, SH
- Date Issued
- 1995-11
- Publisher
- KOREAN INST CHEM ENGINEERS
- Abstract
- SiF4 was added into Si2H6H2 to deposit polycrystalline silicon films at low temperatures, around 400C in a remote plasma enhanced chemical vapor deposition reactor. It was found out that the fluorine chemistry obtained from SiF4 addition had an influence on the chemical composition, crystallinity, and silicon dangling bond density of the film. The fluorine chemistry reduced the amount of hydrogen and oxygen incorporated into the film and also suppressed the formation of powders in the gas phase, which helped the crystallization at low temperatures. Effect of S1F(4) concentration as well as the deposition temperature was also significant.
- Keywords
- chemical vapor deposition; silicon films; plasma deposition; fluorine chemistry; polysilicon films
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29245
- DOI
- 10.1007/BF02705862
- ISSN
- 0256-1115
- Article Type
- Article
- Citation
- KOREAN JOURNAL OF CHEMICAL ENGINEERING, vol. 12, no. 5, page. 572 - 575, 1995-11
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- There are no files associated with this item.
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