Article
Cited 3 time in 
Cited 3 time in 
Cited 3 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHUNG, CH | - |
| dc.contributor.author | MOON, SH | - |
| dc.contributor.author | RHEE, SW | - |
| dc.date.accessioned | 2016-04-01T09:00:27Z | - |
| dc.date.available | 2016-04-01T09:00:27Z | - |
| dc.date.created | 2009-03-16 | - |
| dc.date.issued | 1995-11 | - |
| dc.identifier.issn | 0734-2101 | - |
| dc.identifier.other | 1995-OAK-0000011127 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/29248 | - |
| dc.description.abstract | role of surface hydrides and fluorides in the Si chemical vapor deposition (CVD) process was studied by in situ Fourier transform infrared spectroscopy using a porous silicon film as the substrate, Hydrides protect the silicon surface from oxidation until they are desorbed at 350-400 degrees C. However, the hydrides are replaced almost completely by surface fluorides when SiH2F2 is used as a reactant in the CVD process at temperatures above 400 degrees C. The surface is then etched due to a reaction between the fluorides and the surface silicon, When the process temperature is lowered to 250 degrees C, the surface is covered by both hydrides and fluorides, and a silicon film is deposited. (C) 1995 American Vacuum Society. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
| dc.subject | LOW-TEMPERATURE | - |
| dc.subject | EPITAXIAL-GROWTH | - |
| dc.subject | POROUS SILICON | - |
| dc.subject | FILMS | - |
| dc.subject | HYDROGEN | - |
| dc.subject | WATER | - |
| dc.subject | SIH4 | - |
| dc.title | IN-SITU INFRARED SPECTROSCOPIC STUDY ON THE ROLE OF SURFACE HYDRIDES AND FLUORIDES IN THE SILICON CHEMICAL-VAPOR-DEPOSITION PROCESS | - |
| dc.type | Article | - |
| dc.contributor.college | 화학공학과 | - |
| dc.identifier.doi | 10.1116/1.579470 | - |
| dc.author.google | CHUNG, CH | - |
| dc.author.google | MOON, SH | - |
| dc.author.google | RHEE, SW | - |
| dc.relation.volume | 13 | - |
| dc.relation.issue | 6 | - |
| dc.relation.startpage | 2698 | - |
| dc.relation.lastpage | 2702 | - |
| dc.contributor.id | 10052631 | - |
| dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.13, no.6, pp.2698 - 2702 | - |
| dc.identifier.wosid | A1995TF11100007 | - |
| dc.date.tcdate | 2019-02-01 | - |
| dc.citation.endPage | 2702 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 2698 | - |
| dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
| dc.citation.volume | 13 | - |
| dc.contributor.affiliatedAuthor | RHEE, SW | - |
| dc.identifier.scopusid | 2-s2.0-21844498955 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 2 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | LOW-TEMPERATURE | - |
| dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
| dc.subject.keywordPlus | POROUS SILICON | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | HYDROGEN | - |
| dc.subject.keywordPlus | WATER | - |
| dc.subject.keywordPlus | SIH4 | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.