DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, WK | - |
dc.contributor.author | Kang, SW | - |
dc.contributor.author | Rhee, SW | - |
dc.contributor.author | Lee, NI | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Kang, HK | - |
dc.date.accessioned | 2016-04-01T09:17:42Z | - |
dc.date.available | 2016-04-01T09:17:42Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 2002-11 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.other | 2002-OAK-0000010387 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/29816 | - |
dc.description.abstract | Atomic layer chemical vapor deposition of zirconium silicate films with a precursor combination of ZrCl4 and tetra-n-butyl orthosilicate (TBOS) was studied for high dielectric gate insulators. The effect of deposition conditions, such as deposition temperature, pulse time for purge and precursor injection on the deposition rate per cycle, and composition of the film were studied. At 400 degreesC, the growth rate saturated to 1.35 Angstrom/cycle above 500 sccm of the argon purge flow rate. The growth rate, composition ratio ((Zr/Zr+Si)), and impurity contents (carbon and chlorine) saturated with the increase of the injection time of ZrCl4 and TBOS and decreased with the increased deposition temperature from 300 to 500 degreesC. The growth rate, composition ratio, carbon, and chlorine contents of the Zr silicate thin films deposited at 500 degreesC were 1.05 Angstrom/cycle, 0.23, 1.1 at. %, and 2.1 at. %, respectively. It appeared that by using only zirconium chloride and silicon alkoxide sources, the content of carbon and chlorine impurities could not be lowered below 1%. It was also found that the incorporation rate of metal from halide source was lower than alkoxide source. (C) 2002 American Vacuum Society. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.subject | VAPOR-DEPOSITION | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | THIN-FILMS | - |
dc.subject | OXIDES | - |
dc.subject | GROWTH | - |
dc.title | Atomic layer deposition of zirconium silicate films using zirconium tetrachloride and tetra-n-butyl orthosilicate | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1116/1.1517998 | - |
dc.author.google | Kim, WK | - |
dc.author.google | Kang, SW | - |
dc.author.google | Rhee, SW | - |
dc.author.google | Lee, NI | - |
dc.author.google | Lee, JH | - |
dc.author.google | Kang, HK | - |
dc.relation.volume | 20 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 2096 | - |
dc.relation.lastpage | 2100 | - |
dc.contributor.id | 10052631 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.20, no.6, pp.2096 - 2100 | - |
dc.identifier.wosid | 000179441700042 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 2100 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2096 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.citation.volume | 20 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-0036864246 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 30 | - |
dc.description.scptc | 33 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.