Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
SCIE
SCOPUS
- Title
- Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
- Authors
- Cho, D; Cheon, S; KIM, KI SEOK; Lee, SH; Cho, YH; Cheong, SW; Yeom, HW
- Date Issued
- 2016-01
- Publisher
- Nature Publishing Company
- Abstract
- The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29893
- DOI
- 10.1038/NCOMMS10453
- ISSN
- 2041-1723
- Article Type
- Article
- Citation
- NATURE COMMUNICATIONS, vol. 7, page. 10453, 2016-01
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