DC Field | Value | Language |
---|---|---|
dc.contributor.author | JEONG, YH | - |
dc.contributor.author | CHOI, KH | - |
dc.contributor.author | JO, SK | - |
dc.contributor.author | KANG, BK | - |
dc.date.accessioned | 2017-07-19T06:48:46Z | - |
dc.date.available | 2017-07-19T06:48:46Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1995-02 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/33825 | - |
dc.description.abstract | Accumulation-mode and depletion-mode GaAs metal-insulator-semiconductor field-effect transistors (MISEETs), with sulfur-treatment and a photochemical vapor-deposited-P3N5 gate insulator, have been successfully fabricated. The devices have good linearity, low hysteresis in current-voltage characteristics, and the instability of the current less than 22 percent for the period of 1.0-1.0 x 10(4) s. The effective electron mobility and extrinsic transconductance of the FETs at room temperature are about 1300 cm(2)/V . s and 1.41 mS/mm for the accumulation-mode, and about 4500 cm(2)/V . s and 4 mS/mm for the depletion-mode, respectively. Capacitance-voltage (C-V) characteristics and Anger electron spectroscopy (AES) analysis for different sulfur-treatment conditions are discussed. The atomic concentration ratios of sulfur and oxygen to arsenide oil GaAs surfaces and GaAs metal-insulator-semiconductor (MIS) interface properties are critically dependent on sulfur pretreatmeent conditions, and the optimum sulfur-treatment temperature is determined to be about 40 degrees C. The minimum density of interface trap states for an Al/P3N5/GaAs MIS diode with the optimized surface treatment is about 4.3 x 10(10) cm(-2) eV(-1). | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | SULFUR PASSIVATION | - |
dc.subject | PHOSPHORUSNITRIDE | - |
dc.subject | GAAS MIS INTERFACE | - |
dc.subject | AES ANALYSIS | - |
dc.subject | PHOTO-CVD | - |
dc.subject | GAAS MISEET | - |
dc.subject | DEPOSITION | - |
dc.subject | SURFACES | - |
dc.subject | FILM | - |
dc.title | EFFECTS OF SULFIDE PASSIVATION ON THE PERFORMANCE OF GAAS MISFETS WITH PHOTO-CVD GROWN P3N5 GATE INSULATORS | - |
dc.type | Article | - |
dc.identifier.doi | 10.1143/JJAP.34.1176 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.34, no.2B, pp.1176 - 1180 | - |
dc.identifier.wosid | A1995RF65900103 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 1180 | - |
dc.citation.number | 2B | - |
dc.citation.startPage | 1176 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 34 | - |
dc.contributor.affiliatedAuthor | JEONG, YH | - |
dc.contributor.affiliatedAuthor | KANG, BK | - |
dc.identifier.scopusid | 2-s2.0-0029252378 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | SULFUR PASSIVATION | - |
dc.subject.keywordAuthor | PHOSPHORUSNITRIDE | - |
dc.subject.keywordAuthor | GAAS MIS INTERFACE | - |
dc.subject.keywordAuthor | AES ANALYSIS | - |
dc.subject.keywordAuthor | PHOTO-CVD | - |
dc.subject.keywordAuthor | GAAS MISEET | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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