DC Field | Value | Language |
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dc.contributor.author | Kim, K | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2017-07-19T12:12:18Z | - |
dc.date.available | 2017-07-19T12:12:18Z | - |
dc.date.created | 2016-01-11 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35434 | - |
dc.description.abstract | The electrical stabilities of low-voltage organic field-effect transistors (OFETs) were improved by applying graftable fluorinated polymer (gPFS) layers onto poly(4-vinyl phenol)-based cross-linked dielectrics (cPVP). As a result, a smooth and hydrophobic surface was formed, and the dielectric film displayed a low-leakage current density. The chemisorbed gPFS groups enabled the solution processing of an overlying 5,11-bis(triethylsilylethynyl)anthradithiophene semiconductor, which formed favorable terrace-like crystalline structures after solvent annealing. The top-contact OFETs showed superior operational stability compared to cPVP-based OFETs. Hysteresis was negligible, and the off-current of the transfer curve was one order of magnitude lower than that obtained from cPVP-based OFETs. The threshold voltage shift measured after a sustained gate bias stress for 1 h decreased significantly after introduction of the hydrophobic gPFS treatment; the energetic barrier to creating charge trapping sites increased, and the trap distribution narrowed, as supported by the stretched exponential function model. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | TRIETHYLSILYLETHYNYL-ANTHRADITHIOPHENE | - |
dc.subject | PERFORMANCE | - |
dc.subject | FABRICATION | - |
dc.subject | DENSITY | - |
dc.subject | GROWTH | - |
dc.title | Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/C5CP01909E | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.26, pp.16791 - 16797 | - |
dc.identifier.wosid | 000356874000018 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 16797 | - |
dc.citation.number | 26 | - |
dc.citation.startPage | 16791 | - |
dc.citation.title | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84933059741 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | TRIETHYLSILYLETHYNYL-ANTHRADITHIOPHENE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
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