Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station
SCIE
SCOPUS
- Title
- Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station
- Authors
- Jee, S; Lee, J; Son, J; Kim, S; Kim, CH; Moon, J; Kim, B
- Date Issued
- 2015-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- A power amplifier (PA) for a femto-cell base station should be highly efficient and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved by designing an asymmetric Doherty power amplifier (DPA). From the simulation result for a long-term evolution (LTE) signal with 7.2-dB PAPR, the DPA delivers the highest efficiency with 1: 1.4 cell size ratio for the carrier and peaking PAs. A small size is achieved by designing the DPA using a GaN monolithic microwave integrated circuit process. For broadband operation, we employ a new circuit topology to alleviate the bandwidth limiting factors of the DPA such as a quarter-wavelength transformer, phase compensation network, and offset line. With the design concept, an asymmetric broadband DPA is implemented using a TriQuint 3MI 0.25-mu m GaN-HEMT MMIC process. Across 2.1-2.7 GHz, the implemented PA deliver a drain efficiency of over 49%, a gain of over 12.6 dB, and adjacent channel leakage ratio of below -45 dBc at an average power of over 33.1 dBm for the LTE signal. This fully integrated circuit has a chip-size of 2.65 mm 1.9 mm.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35503
- DOI
- 10.1109/TMTT.2015.2442973
- ISSN
- 0018-9480
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 63, no. 9, page. 2802 - 2810, 2015-09
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