DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, K | - |
dc.contributor.author | Song, K | - |
dc.contributor.author | Son, SK | - |
dc.contributor.author | Oh, JW | - |
dc.contributor.author | Jeon, SJ | - |
dc.contributor.author | Kim, W | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Oh, SH | - |
dc.date.accessioned | 2017-07-19T12:16:34Z | - |
dc.date.available | 2017-07-19T12:16:34Z | - |
dc.date.created | 2016-01-21 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35547 | - |
dc.description.abstract | Phase-change random access memory (PCRAM) is one of the most promising nonvolatile memory devices. However, inability to secure consistent and reliable switching operations in nanometer-scale programing volumes limits its practical use for highdensity applications. Here, we report in situ transmission electron microscopy investigation of the DC set switching of Ge-Sb-Te (GST)-based vertical PCRAM cells. We demonstrate that the microstructure of GST, particularly the passive component surrounding the dome-shaped active switching volume, plays a critical role in determining the local temperature distribution and is therefore responsible for inconsistent cell-to-cell switching behaviors. As demonstrated by a PCRAM cell with a highly crystallized GST matrix, the excessive Joule heat can cause melting and evaporation of the switching volume, resulting in device failure. The failure occurred via two-step void formation due to accelerated phase separation in the molten GST by the polaritydependent atomic migration of constituent elements. The presented real-time observations contribute to the understanding of inconsistent switching and premature failure of GST-based PCRAM cells and can guide future design of reliable PCRAM. | - |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.relation.isPartOf | NPG Asia Materials | - |
dc.title | Microstructure-dependent DC set switching behaviors of Ge-Sb-Te-based phase-change random access memory devices accessed by in situ TEM | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/AM.2015.49 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NPG Asia Materials, v.7 | - |
dc.identifier.wosid | 000357094900010 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.title | NPG Asia Materials | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Oh, SH | - |
dc.identifier.scopusid | 2-s2.0-84946908193 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | NONVOLATILE | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | DIAGRAM | - |
dc.subject.keywordPlus | STORAGE | - |
dc.subject.keywordPlus | DRIFT | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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