DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JH | - |
dc.contributor.author | Lin, GB | - |
dc.contributor.author | Kim, DY | - |
dc.contributor.author | Lee, JW | - |
dc.contributor.author | Cho, J | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Kim, YI | - |
dc.contributor.author | Park, Y | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Kim, JK | - |
dc.date.accessioned | 2017-07-19T12:17:18Z | - |
dc.date.available | 2017-07-19T12:17:18Z | - |
dc.date.created | 2016-01-22 | - |
dc.date.issued | 2015-06-15 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35573 | - |
dc.description.abstract | The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission wavelength of 285 nm is investigated as a function of current over a wide range of temperatures (110 K to 300 K). We find that the efficiency-versus-current curve exhibits unique and distinct features over the entire temperature range including three points of inflection. At low temperatures, the change in slope in the efficiency-versus-current curve is particularly pronounced producing a minimum in the efficiency after which the efficiency rises again. Furthermore, at high current density, the low-temperature efficiency exceeds the room-temperature efficiency. The feature-rich efficiency-versus-current curve is consistent with an enhancement in p-type conductivity by field-ionization of acceptors that occurs in the high-injection regime and is particularly pronounced at low temperatures. Differential conductivity measurements show a marked rise in the high-injection regime that is well correlated to the minimum point in the efficiency-versus-current curve. (C) 2015 Optical Society of America | - |
dc.language | English | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.relation.isPartOf | OPTICS EXPRESS | - |
dc.title | Distinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1364/OE.23.015398 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | OPTICS EXPRESS, v.23, no.12, pp.15398 - 15404 | - |
dc.identifier.wosid | 000356902500028 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 15404 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 15398 | - |
dc.citation.title | OPTICS EXPRESS | - |
dc.citation.volume | 23 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-84943529328 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
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