Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
SCIE
SCOPUS
- Title
- Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
- Authors
- Heo, H; Sung, JH; Jin, G; Ahn, JH; Kim, K; Lee, MJ; Cha, S; Choi, H; Jo, MH
- Date Issued
- 2015-07-01
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35649
- DOI
- 10.1002/ADMA.201500846
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 27, no. 25, page. 3803 - 3810, 2015-07-01
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