DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wentao Xu | - |
dc.contributor.author | Lee, Y | - |
dc.contributor.author | Min, SY | - |
dc.contributor.author | Park, C | - |
dc.contributor.author | Lee, TW | - |
dc.date.accessioned | 2017-07-19T12:26:03Z | - |
dc.date.available | 2017-07-19T12:26:03Z | - |
dc.date.created | 2016-02-25 | - |
dc.date.issued | 2016-01-20 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35810 | - |
dc.description.abstract | A rapid, scalable, and designable approach to produce a cross-shaped memristor array is demonstrated using an inorganic-nanowire digital-alignment technique and a one-step reduction process. Two-dimensional arrays of perpendicularly aligned, individually conductive Cu-nanowires with a nanometer-scale CuxO layer sandwiched at each cross point are produced. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.title | Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/ADMA.201503153 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.28, no.3, pp.527 - 532 | - |
dc.identifier.wosid | 000368712900016 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 532 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 527 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 28 | - |
dc.contributor.affiliatedAuthor | Wentao Xu | - |
dc.contributor.affiliatedAuthor | Lee, Y | - |
dc.contributor.affiliatedAuthor | Lee, TW | - |
dc.identifier.scopusid | 2-s2.0-84955207820 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 12 | - |
dc.description.scptc | 11 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | RESISTIVE MEMORY DEVICES | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CORE-SHELL NANOWIRES | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | ALIGNED NANOWIRES | - |
dc.subject.keywordPlus | BUILDING-BLOCKS | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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