In-situ nitrogen plasma passivation of Al2O3/GaN interface states
SCIE
SCOPUS
- Title
- In-situ nitrogen plasma passivation of Al2O3/GaN interface states
- Authors
- Son, J; Chobpattana, V; McSkimming, BM; Stemmer, S
- Date Issued
- 2015-03
- Publisher
- American institute of Physics
- Abstract
- The authors report on in-situ nitrogen plasma cleaning, consisting of alternating cycles of nitrogen plasma and trimethylaluminum prior to the dielectric deposition, as an effective method to passivate Al2O3/GaN interface states. The nitrogen plasma pretreatment reduces the frequency dispersion in capacitance-voltage and the conductance peak in conductance-voltage measurements, compared to interfaces cleaned with a hydrogen plasma pretreatment. It is shown that the decrease of the trap density (D-it) below the conduction band is correlated with the suppression of Ga-O bonding and the formation of an aluminum oxynitride interfacial layer.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35911
- DOI
- 10.1116/1.4905846
- ISSN
- 0734-2101
- Article Type
- Article
- Citation
- Journal of Vacuum Science and Technology A, vol. 33, no. 2, page. 20602, 2015-03
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