Organic n-channel thin-film transistors based on dichlorinated naphthalene diimides

Abstract

Five core-dichlorinated naphthalene diimides (NDIs) bearing several fluoroalkyl-substituents at the imide nitrogens were synthesized, characterized and employed in organic n-channel thin-film transistors with a vacuum-deposited semiconductor layer on 110 nm thick SiO2 (100 nm)/AlOx (8 nm)/SAM (1.7 nm) and 5.7 nm thick AlOx (3.6 nm)/SAM (2.1 nm) gate dielectrics. The electron mobility of the thin-film transistors under ambient conditions is as large as 1.3 cm(2)/Vs on the thicker gate dielectric. On the thinner gate dielectric the mobility is lower (0.4 cm(2)/Vs) but enables switching at gate-source voltages of only 3V. Such outstanding performance together with the feasible synthetic access to these compounds make these semiconductors highly promising for low-cost, large-area, and flexible electronics.