Effects of microwave-assisted annealing on the morphology and electrical performance of semiconducting polymer thin films
SCIE
SCOPUS
- Title
- Effects of microwave-assisted annealing on the morphology and electrical performance of semiconducting polymer thin films
- Authors
- Shang, X; Yu, H; Choi, W; Lee, EK; Oh, JH
- Date Issued
- 2016-03
- Publisher
- Elsevier
- Abstract
- Organic field-effect transistors (OFETs) based on p-channel polymer semiconductors such as poly(3-hexyl)thiophene (P3HT) and 30-diketopyrrolopyrrole-selenophene vinylene selenophene (30-DPP-SVS) were fabricated using a microwave (MW) irradiation process for thermal annealing. The influence of MW annealing was investigated based on microstructural characterizations such as X-ray diffraction (XRD) and atomic force microscopy (AFM). MW annealing not only shortened the annealing time, but also produced enhanced device performance including higher on/off ratio, lower threshold voltage, and higher field-effect mobility in comparison with the traditional annealing method. These microstructural analyses revealed that annealing by MW irradiation enhances the crystallinity and molecular orientation in the polymer thin films in a short time, thereby improving the electrical performance effectively. Our results suggest that MW-assisted annealing is a simple and viable method for enhancing OFET performance. (C) 2015 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35977
- DOI
- 10.1016/J.ORGEL.2015.12.027
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- Organic Electronics: physics, materials, applications, vol. 30, page. 207 - 212, 2016-03
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