DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, S | - |
dc.contributor.author | Jang, HM | - |
dc.contributor.author | Lee, Nam-Suk | - |
dc.contributor.author | Son, JY | - |
dc.contributor.author | Gupta, R | - |
dc.contributor.author | Garg, A | - |
dc.contributor.author | Ratanapreechachai, J | - |
dc.contributor.author | Scott, JF | - |
dc.date.accessioned | 2017-07-19T12:34:09Z | - |
dc.date.available | 2017-07-19T12:34:09Z | - |
dc.date.created | 2016-06-17 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/36046 | - |
dc.description.abstract | Orthorhombic GaFeO3 (o-GFO) with the polar Pna2(1) space group is a prominent ferrite owing to its piezoelectricity and ferrimagnetism, coupled with magnetoelectric effects. Herein, we demonstrate large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrRuO3/STO substrate show the net switching polarization of similar to 35 mu C cm(-2) with an unusually high coercive field (E-c) of +/- 1400 kV cm(-1) at room temperature. The positive-up and negative-down measurement also demonstrates the switching polarization of similar to 26 mu C cm(-2). The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. We have theoretically shown that this high value accounts for the extraordinary high E-c and the stability of the polar Pna2(1) phase over a wide range of temperatures up to 1368 K. | - |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.relation.isPartOf | NPG Asia Materials | - |
dc.title | Ferroelectric polarization switching with a remarkably high activation energy in orthorhombic GaFeO3 thin films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/AM.2016.3 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NPG Asia Materials, v.8 | - |
dc.identifier.wosid | 000370921900003 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.title | NPG Asia Materials | - |
dc.citation.volume | 8 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.contributor.affiliatedAuthor | Lee, Nam-Suk | - |
dc.identifier.scopusid | 2-s2.0-84973515220 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 17 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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